Dependence of aging on inhomogeneities in InGaN/AlGaN/GaN light-emitting diodes

Changes of properties of green LEDs based on In x Ga 1-x N/Al y Ga 1-y /GaN heterostructures were studied during 150÷200 hours at currents J = 30÷80 mA. The radiation intensity at low currents (0.1÷1 mA) is quite sensitive to such an aging, it falls down 10÷100 times. Quantum efficiency and spectral parameters at normal currents (J ≈ 10 mA) change non-monotonically during aging, some degradation is observed after 168 hours. The degradation is observed also after a short (