Section V. Lattice sites and structureLattice site changes of ion implanted 8Li in InP studied by alpha emission channeling

The lattice sites of implanted radioactive 8Li atoms in si-InP:Fe have been investigated with the α-emission channeling method using a position-sensitive Si-detector. It is shown that after room temperature implantation the major part of the Li atoms is located on tetrahedral interstitial sites with four P atoms as nearest neighbours, whereas after implantation at a temperature of about 450 K almost only substitutional In-sites are occupied.