Self-aligned metalization technique for deep-submicron IC's

Nadia Lifshitz,M.R. Pinto,C.S. Rafferty,S. C. Fang

Self-aligned metalization technique for deep-submicron IC's

1993

Nadia Lifshitz
M.R. Pinto
C.S. Rafferty
S. C. Fang

The authors propose a new metalization scheme for deep-submicron IC's that enables fabrication of relatively wide, reliable metal interconnects in a narrow ( >

Keywords:

Chemistry
Electronic engineering
Chemical vapor deposition
Lithography
Metallizing
Static random-access memory
Integrated circuit
Fabrication
Etching
Scheduling (production processes)
Interconnection

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