non-volatile passive and method for reading the same array.

Device (10) constituting a nonvolatile passive matrix comprises a memory material dielectric electrically polarizable (12) having hysteresis, particularly a ferroelectric material, said memory material (12) being provided so that is sandwiched in a layer between a first set and a second set (14; 15) of respective parallel addressing electrodes constituting the electrodes of the first set (14) word lines (WL1, ... m) of the device constituting a memory and said electrodes of the first set provided so that a relationship keep practically orthogonality with the electrodes of the second set (15) being, the latter constituting bit lines (BL1, ... n) of the device constituting a memory, a memory cell (13) being with a structure of the type of a capacitor defined in the memory material (12) at crossings between the word lines and the bit lines constituting the memory cells (13) device constituting a memory element of a passive matrix (11), may be each memory cell (13) selectively addressed for a write operation / read through a word line (WL) and a bit line ( BL), a write operation in a memory cell (13) based on setting a desired polarization state in the cell by a voltage that is applied to the cell via the respective word line taking place (WL ) and the respective bit line (BL) defining the cell, setting said applied voltage a given polarization state in the memory cell (13) or wherein said voltage applied able to switch between the polarization states thereof, and a read operation based on a higher voltage taking place than the coercive voltage (Vc) to the memory cell (13) and to detect at least one electrical parameter of a corrientede output bit lines (BL).