Experimental Demonstration of High-Voltage 4H-SiC Bi-Directional IGBTs

We experimentally demonstrate, for the first time, bi-directional 4H-SiC planar gate, insulated gate bipolar transistors fabricated on 250- $\mu \text{m}$ thick, lightly doped free-standing substrates. On Si face, forward voltage drop (at 50 A/cm $^{2})$ of 9.7 V was obtained at room temperature, with a differential ON-resistance of 140 $\text{m}\Omega \cdot \text {cm}^{2}$ , indicating good conductivity modulation. We have also demonstrated control over minority carrier injection in static characteristics of the BD-IGBTs by application of a back-gate bias.