Effects of Excited Plasma Species on Silicon Oxide Films Formed by Microwave Plasma CVD

By using a microwave plasma deposition system, effects of highly excited plasma species on the film formation of silicon oxide have been studied and the roles of excited ion and radical species have been investigated by emission spectra of the excited plasma species. A strong correlation was confirmed between film quality and the amount of highly excited ion species transported to the substrate. Furthermore, high quality films could be formed by increasing the amount of the excited species.