Vertical GaN Power Transistor with Intrinsic Reverse Conduction and Low Gate Charge for High Performance Power Conversion.

These instructions give you guidelines for preparing papers for IEEE Transactions and Journals. In this work, a novel vertical normally-off GaN power transistor featuring a split-gate with intrinsic reverse conduction (RCVFET) and low gate charge is proposed. The static and dynamic device characteristics are studied and analyzed by simulation with Sentaurus-TCAD. Benefiting from the monolithically integrated freewheeling diode, the intrinsic reverse conduction characteristics of the device are independent with the threshold voltage VTH, while a low reverse turn-on voltage VR,ON of 0.8 V is obtained. The RCVFET exhibits a short reverse recovery time Trr of 13 ns and low reverse recovery charge Qrr of 47 nC. Owing to the split-gate design, the gate charge of the RCVFET is also significantly reduced favoring improved switching speed and lower switching power loss. The QGD is as low as 80 nC which is only 20 % of that in the reference device without split-gate design. Accordingly, the turn-off transient time and power dissipation of the RCVFET are reduced by 45 % and 55.7 %, respectively. Meanwhile, the device exhibits a low onresistance Ron of 0.98 mΩ.cm2 and a high breakdown voltage BV of 1.8 kV.