Simulation analysis of electrical characteristics of strained SiGe channel-on-insulator p-MOSFET

The strained SiGe-on-Insulator( SGOI) p-MOSFET and Si-on-Insulator( SOI) p-MOSFET were studied via2-D numerical simulation by ISE TCAD software,respectively. The results indicate that the drain-source saturation current of SGOI p-MOSFET is almost more than twice that of conventional SOI p-MOSFET. The sub-threshold current of SGOI p-MOSFET is 1 ~ 3 orders of magnitude higher than that of SOI p-MOSFET. Because Ge alloy mole fraction is an important parameter for the strained SiGe channel MOSFET,its effect on the electrical characteristics of the SGOI pMOSFET was studied in detail. With the increasing of Ge alloy mole fraction,the overall electrical properties of SGOI p-MOSFET were improved.