The effect of a SiO/sub 2/ interface layer on CPW lines and Schottky barrier diodes on HRS substrates

Aluminium based CPW lines on high resistivity Si (HRS) substrates, and integrated and implanted Schottky barrier diodes have shown bias-dependent leakage current effects. By incorporating a patterned SiO/sub 2/ interface layer between the line conductors and HRS substrate, excellent CPW line performance in terms of leakage current and dissipation loss, and significantly improved Schottky diode isolation can be achieved.