Method for manufacturing passivation layer on pixel electrode, liquid crystal display and manufacturing method thereof

2013 
An embodiment of the invention discloses a method for manufacturing passivation layer on a pixel electrode, a liquid crystal display and a manufacturing method thereof. The method for manufacturing a passivation layer on the pixel electrode includes: forming a passivation layer in a first thickness on the surface of a pixel electrode via process gas in a first flow volume under first power; forming a passivation layer in a second thickness on the surface of passivation layer in the first thickness via process gas in a second flow volume under second power, wherein the first power is smaller than the second power, the first flow volume is smaller than the second flow volume, the first thickness is smaller than the second thickness, the passivation layer in the first thickness and the passivation layer in the second thickness are compact, so that when through holes are drilled in the passivation layers, undercut is avoided, good electric connection between a top electrode and a pixel electrode is guaranteed, the problem that a TFT (thin film transistor) product displays abnormally or cannot display due to contact breakage between the top layer ITO (indium tin oxide) film and the pixel ITO film is solved, product rate of the TFT products is improved.
    • Correction
    • Source
    • Cite
    • Save
    • Machine Reading By IdeaReader
    0
    References
    0
    Citations
    NaN
    KQI
    []