A non-collinear double MgO based perpendicular magnetic tunnel junction

Double MgO based magnetic free layers are state-of-the-art solutions for providing high performance perpendicular spin-transfer torque-magnetic random access memory devices. We provide device measurements showing reduction of switching current in perpendicular magnetic tunnel junctions (p-MTJs) using non-collinear ferromagnets on the double MgO template. This structure is engineered by introducing an in-plane ferromagnetic cap, which produces in-plane stray field effects on the free layer. The non-collinear structure delivers ∼53% reduction in critical current density in STT switching without weakening the thermal stability of the devices. The advantages in device performance using non-collinearity in magnetization is sustained down to ∼20 nm MTJs. Micromagnetic simulations suggest inherent differences in the magnetization reversal process between our proposed non-collinear p-MTJ and a well-known double MgO based p-MTJ.