Investigation on the β-Ga2O3 Deposited on off-angled Sapphire (0001) Substrates

Abstract β-Ga2O3 films were deposited on 6° off-angled (toward direction) sapphire (0001) substrates by low pressure MOCVD. β-Ga2O3 films followed step-flow growth mode at the lower growth pressure, and grains size and growth rate of the film decreased with the increasing growth pressure. The decrease of Ga and O vacancies induced the weakness of the blue and green photoluminescence intensity, while N component enchanced the red photoluminescence intensity. Optical bandgaps of the β-Ga2O3 films grown at 20, 30 and 40 Torr were 4.61, 4.64 and 4.65 eV, respectively.