Corrections to “Density of Traps at the Insulator/III-N Interface of GaN Heterostructure Field-Effect Transistors Obtained by Gated Hall Measurements”

In the above paper [1] , equation 5 should read (1) $dV_{B} ={d\left ({ {q\Delta n} }\right )} / {C_{B} }$ Equation 6 should read (2) $D_{it} \left ({ {E_{f} +{q\Delta n}/ {C_{B} }} }\right )\approx \frac {C_{B} C_{I} }{q^{2}}\left [{ {\left ({ {\frac {d\left ({ {q\Delta n} }\right )}{dV_{G} }} }\right )^{-1}-\frac {1}{C_{HF} }} }\right ]$