Ion implanted improved substrate with reduction of gallium-nitride-based electronic device epitaxial stress

The present invention discloses an ion implanted improved substrate with the reduction of gallium-nitride-based electronic device epitaxial stress. According to the ion implanted improved substrate, the ion implantation technology is used to selectively implant ions into a conventional gallium nitride heteroepitaxial epitaxial substrate, thus the thermal expansion coefficient, Young modulus, lattice constant, crystal structure and the like of a substrate material with the ion implantation are changed, the physical performance parameter of the heteroepitaxial substrate material is matched with the performance parameter of a gallium nitride material so as to adapt the epitaxial growth of the gallium nitride electronic device in a heterogeneous substrate, the epitaxial growth stress of the gallium-nitride-based electronic device in the heterogeneous substrate is reduced, and thus the growth quality of the gallium nitride material and the overall performance of the device are improved. According to ion implanted improved substrate, the reduction of the epitaxial stress of the gallium-nitride-based electronic device is obviously improved, and the ion implanted improved substrate plays an important role in improving the overall performance of the electronic device and thus has potential practical and commercial values in the electronic device application.