Design of a SIW on-chip antenna using 0.18-μm CMOS process technology at 0.4 THz

Abstract A 0.4-THz on-chip antenna (OCA) is configured with high radiation efficiency and high gain, utilizing standard CMOS process technology. In this design, the back cavity is formed by connecting a top and bottom metal layer, which is connected through the vias, named substrate-integrated-waveguide (SIW). This back cavity finds to suppress the surface wave and separates the radiation towards the low-resistive substrate. The slotted radiator is constructed on the top metal layer that leads to enhance the radiation performance in broadside direction. The projected antenna size of 490 × 450 µm2 and shows a 3-dB gain bandwidth of ∼ 39%, a directivity of ∼7.02 dBi, a radiation efficiency of ∼ 87.9 % in the frequency range from 0.380 THz to 0.420 THz. This OCA is suitable for various THz applications in suggested band.