Thermally induced variations of strain condition and emission behavior in flat and bendable light-emitting diodes on different substrates.

The emission behaviors of four light-emitting diodes (LEDs) of different substrate structures, including a lateral LED grown on sapphire, a vertical LED wafer-bonded onto Si (111), a bendable LED Ag-epoxied onto a flat metal, and another bendable LED Ag-epoxied onto a metal of a curved surface, under different duty cycles of current injection are compared. Their different variation trends of emission behavior with injection duty cycle are attributed to the different thermally-induced strain conditions in the epitaxial layers, which are controlled by their substrate structures, in increasing injection duty cycle or current level. The results of Raman scattering measurements during LED operation show that a stronger tensile strain is generated under heating for reducing the quantum-confined Stark effect and hence increasing emission efficiency when the epitaxial layer is not tightly bonded onto a hard substrate. Such a behavior is particularly stronger when the epitaxial layer is bent.