Solid-state imaging device and manufacturing method

The present invention provides a solid-state imaging device comprising: a substrate (30), an insulator layer (31) on a substrate (30), forming a semiconductor layer (32) on the insulator layer (31) is formed in the semiconductor layer ( silicon layer 32) (33). Silicon layer (33) having a plurality of pixel portions, each portion of the plurality of pixels includes: a photoelectric conversion portion (34), which transform the light into a signal charge; and a circuit for reading out signal charges. The refractive index of the insulator layer (31) is smaller than the refractive index of the semiconductor layer (32).