Determination of the RF-noise source parameters in AlInAs/GaInAs-HEMT heterostructures based on measured noise temperature dependence against electric field

The noise temperature dependence on the electric field in an AlInAs/GaInAs-HEMT heterostructure has been measured. It was found that the dependence of the noise temperature on the electric field in GaAs-MESFETs and in AlInAs/GaInAs-HEMTs is remarkably different. For this reason a different model must be used for AlInAs/GaInAs-HEMTs. Based on the measured noise temperature dependence on the electric field, an analytic noise model for the AlInAs/GaInAs HEMT has been developed. The noise source parameters were calculated and compared with extracted noise source parameters from noise measurements.