One-step chemical vapor deposition of 3D-NbS2/2D-MoS2 metal/semiconductor junctions

3D-2D metal-semiconductor junctions composed of bulk NbS 2 and monolayer MoS 2 have been obtained from the one-step chemical vapor deposition method. The results of Raman and atomic force microscopy confirmed that the outer and the inner regions of the crystal are a bulk NbS 2 (metal) and a monolayer MoS 2 (semiconductor), respectively. The junctions showed clear rectifying characteristics, exhibiting self-organized formation of 3D metal/2D semiconductor Schottky junctions.