Advanced high-K gate dielectric for high-performance short-channel In 0.7 Ga 0.3 As quantum well field effect transistors on silicon substrate for low power logic applications

This paper describes integration of an advanced composite high-K gate stack (4nm TaSiO x -2nm InP) in the In 0.7 Ga 0.3 As quantum-well field effect transistor (QWFET) on silicon substrate. The composite high-K gate stack enables both (i) thin electrical oxide thickness (t OXE ) and low gate leakage (J G ) and (ii) effective carrier confinement and high effective carrier velocity (V eff ) in the QW channel. The L G =75nm In 0.7 Ga 0.3 As QWFET on Si with this composite high-K gate stack achieves high transconductance of 1750µS/µm and high drive current of 0.49mA/µm at V DS =0.5V.