Effect of forming gas annealing on the inversion response and minority carrier generation lifetime of n and p-In0.53Ga0.47As MOS capacitors

Display Omitted Inversion response observed for n-type &p-type Au/Ni/Al2O3/In0.53Ga0.47As MOS devices.Cox extraction method from relationship between inversion capacitance and conductance.In0.53Ga0.47As minority carrier generation lifetime modified by forming gas annealing.Hydrogen passivates mid-gap bulk defects acting as generation-recombination centers. In0.53Ga0.47As MOS capacitors with a range of Al2O3 oxide thickness values were examined using multi-frequency capacitance-voltage and conductance-voltage characterization for n and p-type In0.53Ga0.47As epitaxial layers. The samples exhibited a minority carrier response consistent with surface inversion for both n and p-type In0.53Ga0.47As MOS structures. An equality between the peak magnitude of the frequency scaled conductance, G/ω, and the derivative of capacitance with frequency, -ωdC/dω in strong inversion allows estimation of accurate Cox values for the varying thickness MOS devices. Minority carrier generation lifetimes, ?g, were extracted from the experimentally measured transition frequencies, ωm, through physics based a.c. simulations. It was observed that ?g was reduced following a post-metallization 275?C forming gas anneal treatment over both n and p-In0.53Ga0.47As. This is indicative of an improvement in the In0.53Ga0.47As quality by means of hydrogen passivation of the mid-gap bulk defects responsible for the observed minority carrier response.