Semiconductor film production method, semiconductor film, doping complex compound, and doping method

Provided are: a semiconductor film uniformly doped with silicon and having excellent electrical properties; and a production method therefor. The present invention uses a dopant material that includes a complex compound, said complex compound containing at least silicon, a halogen, and a hydrocarbon group or heterocyclic group, either of which may have a substituent group, and dopes a semiconductor film with the same so as to obtain a semiconductor film doped with Si, wherein doping occurs up to a depth of at least 0.3 μm or more from the film surface, the carrier density is 1×10 20 /cm 3 or less, the mobility is 1 cm 2 /Vs or more, and the film thickness is 100 μm or less.