Manufacture of SiGe HMOSFET

The advances in the growth of pseudomorphic silicon-germanium epitaxial layers combined with the strong need for high-speed devices have led to increased interest in silicon-based heterojunction field-effect transistors. Here we present a kind of strained SiGe-channel P-MOSFET which can offer better performance compared to the Si device. When applying to the sample with W/L value of 14/7, a 30% improvement can be achieved in transconductance.