Process for preparing Cu2ZnSnS4 semiconductor thin film solar cell

This invention relates to a technology for preparing Cu2ZnSnS4 semiconductor film solar cells, which mixes grains of Cu, Zn and Sn in the chemical measured ratio Cu : Zn : Sn=1.6-1.7 : 1 : 1 to press it to a cylindrical pressed shape in the diameter of 10mm and height of 15mm to be packaged in a quartz tube in the vacuum degree of 10-4-10-3pa to form an alloy ingot by inducing melt, then manufactures a brittle alloy thin strip of 15-30mum thick and 5-8mm wide by a strip-throwing technology, then mixes the strip with sulfur powder to be milled for 48-96 h to form black slurry to be coated on a Mo matrix or a glass matrix then to be dried and heated in H2 or N2 atmosphere, which can avoid loss of elements and guarantee strict chemical measurement ratio.