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Selective epitaxial Si/SiGe growth forVTshift adjustment in highkpMOS devices
Selective epitaxial Si/SiGe growth forVTshift adjustment in highkpMOS devices
2007
R. Loo
Haruyuki Sorada
Akira Inoue
Byeong-Chan Lee
Sangjin Hyun
Stefan Jakschik
Guilherme Lujan
Thomas Hoffmann
Matty Caymax
Keywords:
Chemical physics
Analytical chemistry
Epitaxy
Chemistry
Engineering physics
Condensed matter physics
Correction
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