Electro-optically addressable total internal reflection switch in domain-engineered LiNbO/sub 3/

Summary form only given. We have developed a novel electro-optically addressable total internal reflection (TIR) switch in a sample of LiNbO/sub 3/ that has been engineered to have a sharp boundary between two anti-parallel domain regions. Such a switch can provide numerous advantages including ease of fabrication, the possibility of high contrast ratios (TIR is a 100% efficient process), relatively low drive voltages, and a wavelength dependence that is superior to other electro-optic devices such as Pockels cells.