MOCVD grown HgCdTe p+BnN+ barrier detector for MWIR HOT operation

The work reports on mid-wavelength infrared HgCdTe barrier detectors with a zero valence band offset, grown by metal organic chemical vapour deposition on GaAs substrates. The experiments indicate the influence of the barrier on electrical and optical performances of the p + BnN + device. The devices exhibit very low dark current densities in the range of (2÷3)×10 –3 A/cm 2 at 300 K and a high current responsivity of about 2A/W in the wide range of reverse bias voltage. The estimated thermal activation energy of about 0.33 eV is close to the full Hg 0.64 Cd 0.36 Te bandgap, what indicates diffusion limited dark currents.