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Channel Strain Analysis in High Performance Damascene-gate pMOSFETs by High Spatial Resolution Raman Spectroscopy
Channel Strain Analysis in High Performance Damascene-gate pMOSFETs by High Spatial Resolution Raman Spectroscopy
2009
Munehisa Takei
Daisuke Kosemura
Kohki Nagata
Hiroaki Akamatsu
Satoru Mayuzumi
Shinya Yamakawa
Hitoshi Wakabayashi
Atsushi Ogura
Keywords:
Raman spectroscopy
Copper interconnect
Analytical chemistry
Image resolution
Strain (chemistry)
Communication channel
Materials science
high spatial resolution
Optoelectronics
Correction
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