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A Floating-Body Cell Fully Compatible With 90-nm CMOS Technology Node for a 128-Mb SOI DRAM and Its
A Floating-Body Cell Fully Compatible With 90-nm CMOS Technology Node for a 128-Mb SOI DRAM and Its
2007
Takeshi Hamamoto
Yoshihiro Minami
Tomoaki Shino
Naoki Kusunoki
Hiroomi Nakajima
Mutsuo Morikado
Takashi Yamada
Kazumi Inoh
Atsushi Sakamoto
Tomoki Higashi
Katsuyuki Fujita
Kosuke Hatsuda
Takashi Ohsawa
Akihiro Nitayama
Keywords:
Physics
Chip
Electronic engineering
CMOS
Silicon on insulator
Dynamic random-access memory
Dram
Correction
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