DIRECT BANDGAP QUANTUM DOTS EMBEDDED IN A TYPE-II GaAs/AlAs DOUBLE QUANTUM WELL STRUCTURE

Quantum dots with strong three dimensional confinement and low surface density have been identified in a structure which was nominally grown as a type-II GaAs/AlAs bilayer surrounded by GaAlAs barriers. Micro-luminescence experiments in magnetic fields performed on these dots display excitonic spin-splitting and orbital Zeeman effects for the excited states. The modification by the magnetic field of the diffusion and/or trapping of photoexcited carriers into the dots is also observed.