Design of Split Oxide TFT with Large Size for GOA Circuit

A type of stable and high performance top-gate amorphous-indium-gallium-zinc-oxide (a-IGZO) TFT has been developed by using split active oxide semiconductor. The performance and the stabilization of split-TFT has been systematically studied. Finally, this split-TFT structure is placed in an 18T1C gate driver on array (GOA) circuit to testify the function.