Fabrication of Inverted Bottom Organic Light-emitting Device with Li_3N n-type Doping Electron Injecting Layer

The fabrication of a kind of inverted bottom organic light-emitting device was reported,using Li3N doping layer Alq3∶Li3N as electron injecting layer.The structure of this device is ITO/Alq3∶Li3N/Alq3/NPB/MoO3/Al.In this device,ITO glass was used as transparent cathode,Al as top anode,the Li3N n-type doping layer Alq3∶Li3N was inserted the ITO cathode and the electron transporting layer,the electron injecting and transporting ability of this device was improved.And 10nm MoO3 was inserted as the buffer layer between Al anode and hole transporting layer NPB,and the hole injecting ability of this device was enhanced.Experiments show that the device with this structure performs as well as the organic light-emitting device with traditional structure such as ITO/NPB/Alq3/LiF/Al.This device can be used in amorphous silicon thin film transistor active matrix organic light-emitting device display.