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ALD-ZrO2 gate dielectric with suppressed interfacial oxidation for high performance MoS2 top gate MOSFETs
ALD-ZrO2 gate dielectric with suppressed interfacial oxidation for high performance MoS2 top gate MOSFETs
2021
Wen Hsin Chang
Naoya Okada
Masayo Horikawa
Takahiko Endo
Yasumitsu Miyata
Toshifumi Irisawa
Keywords:
Optoelectronics
Gate dielectric
Materials science
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