Characteristics and reliabilities on the Dicing before Grinding (DBG) process in nMOSFETs

Abstract This paper reports the characteristics and reliability of nMOSFETs using the DBG process under mechanical tensile strain. Under a 0.075% longitudinal tensile strain, the increment rates of I d,sat are 6.55% and 3.51% for 1 μm and 0.135 μm nMOSFET. The increment rate of I d,sat is decreased and saturated, when the gate length is in the sub-micron region. Good fatigue properties and reliability are obtained after dynamic, static bending strain and hot carrier stress under a 0.075% longitudinal tensile strain.