Photoluminescence behavior of amber light emitting GaInN-GaN heterostructures

We present an investigation of optical properties of yellow light emitting (Ga,In) N-based devices grown by metalorganic vapor phase epitaxy (MOVPE) on c-plane sapphire with different designs: well width, indium composition up to 23 percent in the well layer. Using time-resolved photoluminescence measurements collected in range of 8-300K, temperature – dependent photoluminescence decays are determined, they exhibit similar behaviors for all samples. These quantum devices always display a two-mode exponential decay with a long decay time and a short one in a ratio about four to five. The photoluminescence intensities measured from low temperature to room temperature give large values of activation temperature that indicate the increasing of the non-radiative recombination rate when the temperature increases. The average decay times are found by a procedure using fitting sigmoidal functions. These decay times increase exponentially with the indium concentration and the well width due to influence of quantum confined Stark effect on these devices. Finally, in order to estimate the performances of our samples, we plotted the decay times obtained versus product of the indium content and the well width together with others published decay times.