Diamond Schottky‐pn diode without trade‐off relationship between on‐resistance and blocking voltage

We successfully improved a merged diamond diode, namely a Schottky-pn diode (SPND), which is composed of a fully depleted n-type active layer sandwiched between a highly doped p + -type layer and a Schottky metal. According to the analysis of operation mechanisms based on band diagrams, we increased the acceptor concentration in the p + -type layer in order to decrease the on-resistance (R on S), and increased the n-type layer width to reach higher blocking voltage (V block ). Consequently, much lower R on S of 0.03 mΩ cm 2 and higher V block than those of the previously reported diamond SPND were achieved simultaneously. Thus, we elucidated experimentally that the diamond SPND has no trade-off relationship between R on S and V block , and is suitable for low-loss high-power switching devices.