Preparation method for high-resisting and high-attenuation-resisting backing material

The invention discloses a preparation method for a high-resisting and high-attenuation-resisting backing material and belongs to the technical field of materials. According to the preparation method disclosed by the invention, by using a CVD (Chemical Vapor Deposition) method and taking ethanol as a carbon source, three-dimensional graphene with large size and a porous multistage structure is grown by exploring the growth temperature, the growth time, the flow of oxygen gas, the annealing speed and other factors and taking foamed nickel as a catalyst and a temperature carrier; a graphene framework is filled with a tungsten powder and epoxy resin compound; the sound absorption property of the a tungsten powder and epoxy resin compound as a traditional backing material is improved by using the porous multistage structure and good electric mass transfer performance of the three-dimensional graphene, and further the high-resisting and high-attenuation-resisting backing material according with actual application of an energy transducer is prepared. Due to the introduction of a graphene three-dimensional continuous framework, the material has better electrical conductivity and larger conjugate field; electronics can freely move in the period; sound energy can be converted into electric energy which is finally converted into heat for dissipating, so the material is excellent in sound absorption effect.