10 – Electrical characterization of semiconductor nanowires by scanning-probe microscopy

This chapter describes the contribution of scanning-probe microscopy to characterize single semiconductor nanowires. Starting with the principles of scanning tunneling microscopy, existing preparation methods to make the investigation of the nanowires compatible with this technique are first reviewed. The relevance of scanning tunneling microscopy in the study of semiconductor nanowires is then addressed through the exploration of their structural and electronic surface properties with an extremely high spatial resolution. Examples are given to highlight the importance of the nanowire surface in the growth dynamics of the nanowire and in the pinning of the Fermi level at their surface. Based on the advantages provided by their unique geometry for a low-cost and efficient integration into nanoscale devices, additional characterization schemes performed with related techniques are also presented to get a deeper understanding of their transport properties.