Sti stress effect modelling method and apparatus for mos device

Disclosed are an STI stress effect modelling method and apparatus for an MOS device, which belong to the technical field of device parameter extraction and modelling. The method comprises: introducing the influence of temperature parameters on the STI stress effect of the MOS device, to form a function that the STI stress effect of the MOS device changes with the temperature parameters; extracting a model parameter Model1 of the MOS device at normal temperature; on the basis of Model1, extracting a parameter Model2 that an STI stress influences the performance of the MOS device at normal temperature; and on the basis of Model2, extracting fitting parameters of the MOS device from the function, to obtain final model parameters. The apparatus comprises: a first module, a second module, a third module and a fourth module. The present invention can accurately describe the influence of temperature on the STI stress effect of an MOS device by establishing a function that the STI stress effect of the MOS device changes with temperature parameters, so that the extracted model parameters are more accurate and reliable.