Volatility and vapourisation characterisation of new precursors

The introduction of new chemicals into semiconductor production processes is an expensive, time consuming exercise. A key parameter required to ensure equipment set up is well suited to the source from the outset of trials is reliable precursor volatility data. In this paper we present the latest vapour pressure values for the technologically interesting Hf and Ru precursors and corresponding thermogravimetric analysis results. A discussion on the interpretation of the values obtained highlights the careful considerations required to ensure promising source materials are not ruled out prematurely.