A 6.O-GHz LowNoiseAmplifier andA 6.O-GHz Class-E PowerAmplifier

Devices using 0.18,um CMOS process areusedto A. LNACircuit Designs design radiofrequency amplifiers, a 6.0-GHzlownoise Thecircuit design forLNAisquite similar totheprevious amplifier (LNA)andan6.0-GHz Class-E poweramplifier. The LNA,withinput powerPin=10.38mW, input voltage Vdd=1.5V, paper (1)except L2andC2.Inthatpaper, twocapacitors andinputcurrent Id=6.92mA, provides a forward gainC21andC22inparallel asfollows: S21=32.135 dBwithaNoiseFigure aslowas1.0dB. Inaddition, a 6.0GHz E-class amplifier, withinputvoltage Vdd=1.5V, provides aforward gainS21=22.374dB withPout=7.136 dBm and C21 poweraddedefficiency PAE =76.1%. Bothamplifiers aretobe C21 checkedon thearchitecture andlinearity forcomparison.Mr Class-E poweramplifiers withdifferent center frequencies are l22 tobepresented andtheir corresponding S21's arechecked, too. Advanced~~~~~~~~ DeinSse'AS,bae nTM .8t Toachieve ahigher gain, twostages ofamplifying units, Advanced Design System (ADS), bases onTSMC0.18Mim namely(MO,M1,M2)and(M5,M6,M7),areused. This andprovides thepossibilities oftwoimportant amplifiers, a tage(O MpI isalshepu totheisoaiShi. lownoseamlifie (LNA and clas-Eamlifie.- two-stage ofamplifying iSalsohelpful totheisolation S22. Low noiseqapifier (lNA) andis aigur cass-E a plfer. atthe Unfortunately, itdistorts thelinearity. Ontheother hand, in LNA requires alownoise figure (NF). Itisplaced atthe between thesupplied input voltage( Vdd'S =1.5V ),there firs stge ad spprssesthenois cotriutiooftheexists aLCtank(L3, C3), which iSquite determinate onthe