Temperature Dependence of the Charge Transport in a C60 based Organic Field Effect Transistor

We studied the temperature dependence of the electron transport in C60 based Organic Field Effect Transistors (OFETs). On the spin-coated bottom gate dielectric, the semi-conducting C60 thin-film has been grown by standard evaporation technique. Device parameters as the threshold voltage, the field effect mobility and the activation energy of the electron transport were determined in the temperature range from 300 K to 77 K. The field effect mobility obeys the Meyer-Neldel Rule (MNR), which is an empirical relation between activation energy and the mobility prefactor.