ELECTRORESISTANCE OF MATERIALS FROM SYSTEM Cu-Ag-Ge-As-Se AT TEMPERATURES 78-400 K AND PRESSURE UP TO 42 GPa

of low temperatures and high pressure on the conductivity of Cu1 xAgxGeAsSe3 (x=0.85, 0.9). These compounds received from practically 100 % ionic conductor AgGeAsSe3 by replacement of a part of silver atoms by copper atoms. Difracrogramms are typical for glasses from the systems Ag-GeAs-S and Ag-Ge-As-Se. The researches of electric resistance were carried out by a method of impedance spectroscopy with the use of investigatedanalyser of impedance RLC-2000 in the frequency range 1kHz-200kHz at temperatures 78K-400 K and at pressures 10-42 GPa. D.c. dependences of resistance from time of material Cu1 xAgxGeAsSe3 with x=0.9 in the cells with dierent electrodes (graphite, silver and copper) were investigated.