(Invited) Reliability Study of RF Power Amplifiers with GaN-on-SiC HEMTs

Jenny Lang,Jang-Kwon Lim,Johan Hellén,Torbjorn M.J. Nilsson,Bo Schodt,Ralf Poder,Ilja Belov,Mietek Bakowski,Peter Leisner

(Invited) Reliability Study of RF Power Amplifiers with GaN-on-SiC HEMTs

2016

Jenny Lang
Jang-Kwon Lim
Johan Hellén
Torbjorn M.J. Nilsson
Bo Schodt
Ralf Poder
Ilja Belov
Mietek Bakowski
Peter Leisner

RF power amplifier demonstrators containing each one GaN-on- SiC, HEMT, CHZ015A-QEG, from UMS in SMD quad-flat noleads package (QFN) were subjected to thermal cycles (TC) and power cycles (PC) and ...

Keywords:

Quad Flat No-leads package
Amplifier
RF power amplifier
Lead (electronics)
Electronic engineering
Electrical engineering
High-electron-mobility transistor
Engineering
reliability study
Engineering physics

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