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Influence of Al 2 O 3 Deposition Process on Electrical Properties of Al 2 O 3 /AlGaN/GaN MIS Structure
Influence of Al 2 O 3 Deposition Process on Electrical Properties of Al 2 O 3 /AlGaN/GaN MIS Structure
2020
Masato Higashi
Mutsunori Uenuma
Koji Yoshitsugu
Eiji Yagyu
Yasuaki Ishikawa
Yukiharu Uraoka
Keywords:
Atomic layer deposition
Materials science
Chemical engineering
deposition process
Optoelectronics
algan gan
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