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Acemap > Paper > A 0.24 μm SiGe BiCMOS mixed-signal RF production technology featuring a 47 GHz f t HBT and 0.18 μm L ett CMOS

A 0.24 μm SiGe BiCMOS mixed-signal RF production technology featuring a 47 GHz f t HBT and 0.18 μm L ett CMOS

1999 
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