Semiconductor device comprising silicide layer and fabrication thereof

PURPOSE: To obtain a low resistance contact having a uniform metal/ semiconductor interface by implanting ions of a specified metal such that an implanted volume extends on the major surface while being rendered amorphous and then performing recrystallization and annealing. CONSTITUTION: Ion dose and body temperature are selected such that an implanted deposition is rendered amorphous and metal ions 90, i.e., Co or Ti , are implanted into the contact region 91 of Si bodies 70, 71 while selecting an implantation energy such that the implanted volume extends on the surface. Furthermore the Si bodies 70, 71 are annealed at a temperature for a time selected such that the implanted volume is recrystallized to produce a uniform metal silicide layer extending onto the major surface while containing all metal ions implanted into the Si bodies 70, 71. The dose is selected such that the thickness of the silicide is less than 50mm.