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16-nm FinFETを用いた6.05-Mb/mm2の高密度及び313psの高速読み出し可能なDouble Pumping型1W1R 2-port SRAM
16-nm FinFETを用いた6.05-Mb/mm2の高密度及び313psの高速読み出し可能なDouble Pumping型1W1R 2-port SRAM
2017
sawada youhei
yabuuti makoto
morimoto sigeo
sano soumei
isii yuuitirou
tanaka sinzi
tanaka miki
sinkyo kouzi
Keywords:
Electronic engineering
Static random-access memory
Materials science
Optoelectronics
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