Laser deposition of cubic boron nitride on electronic materials. Progress report, 15 Aug-14 Sep 91

1991 
This progress report describes the initial favorable results of what probably will become a viable method for the deposition of cubic BN on silicon substrate. During this study, energy fluence of laser beam and the target material (type, form, purity etc.) were identified to be the two most critical parameters. In the past month, we have attempted two procedures to synthesize cubic BN: dual-beam laser ablation of a high purity, sintered hexagonal BN (HBC) grade from Union Carbide, and single-beam laser ablation of a high purity, CVD grown pyrolytic BN. Raman and IR spectroscopy as well as X-ray diffraction analysis of films indicated some evidence of cubic BN. Additional work is to be done in order to optimize the procedure such that only cubic form of BN will be grown.
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