Structure, mechanical and functional properties of aluminum nitride-silicon carbide ceramic material

Two-phase ceramic composites of the dielectric-semiconductor type having different semiconducting phase content (aluminum nitride ceramics with uniformly distributed inclusions of silicon carbide of a certain size) have been produced by pressureless sintering. These composites are characterized by Vickers hardness HV (150 N) 9.5–15.8 GPa, Palmqvist fracture toughness 3.0–4.2 MPa m0.5, bending strength 132–209 MPa, thermal conductivity 37–82 W/(m K), and by a coefficient of the microwave electromagnetic energy attenuation to 36.3 dB/cm. It has been found that as the size of silicon carbide grains in aluminum nitride-based ceramics increases, the thermal conductivity increases and microwave energy attenuation decreases, which is indicative of the decisive role of grain boundaries in scattering both phonons and microwave radiation.